Ion implantation is a process that involves the acceleration of ions into a solid surface, typically semiconductor materials, to create specific changes in the material's properties. Synonyms for this process include ion doping, ion beam doping, and ion-assisted deposition. These terms are used interchangeably within the semiconductor industry, with slight variations in their connotations. Ion doping generally refers to the process of introducing dopant atoms into a semiconductor material, while ion beam doping involves a more precise control over ion energy and trajectories. Ion-assisted deposition, on the other hand, is typically used for non-semiconductor materials, such as metals and ceramics, to improve surface properties.